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EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS

School of Electrical, Computer, and Energy Engineering, Arizona State University, 551 E Tyler Mall, Tempe, AZ 85287, USA

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FABIO ALESSIO MARINO

Department of Information Engineering, University of Padova, via Gradenigo, 6/B, Padova, 35131, Italy

Also with: School of Electrical, Computer, and Energy Engineering, Arizona State University.

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STEPHEN GOODNICK

School of Electrical, Computer, and Energy Engineering, Arizona State University, 551 E Tyler Mall, Tempe, AZ 85287, USA

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DAVID FERRY

School of Electrical, Computer, and Energy Engineering, Arizona State University, 551 E Tyler Mall, Tempe, AZ 85287, USA

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, and

MARCO SARANITI

School of Electrical, Computer, and Energy Engineering, Arizona State University, 551 E Tyler Mall, Tempe, AZ 85287, USA

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https://doi.org/10.1142/S0129156411006714Cited by:1 (Source: Crossref)

Abstract

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as C_g, C_gd, and C_gs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

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References

F. Schwierz and J. Liou , Modern Microwave Transistors: Theory, Design, and Performance ( Wiley , New York , 2003 ) . Google Scholar
F. Diamant and M. Laviron, "Measurement of extrinsic series elements of a microwave MESFET under zero current conditions," in Proc. Eur. Microw. Conf., Helsinki, Finland, Sept. 1982, pp. 451-456 . Google Scholar
R. Anholt and S. Swirhun, IEEE Trans. Microw. Theory Tech. 39(7), 1243 (1991), DOI: 10.1109/22.85396. Crossref, Web of Science, Google Scholar
G. Crupiet al., IEEE Transactions on Microwave Theory and Techniques 54(10), (2006), DOI: 10.1109/TMTT.2006.882403. Google Scholar
R. Akiset al., IEEE Electron. Device Letters 29(4), 306 (2008), DOI: 10.1109/LED.2008.918391. Crossref, Web of Science, Google Scholar
T. Palacioset al., IEEE Electron. Device Lett. 27(1), 13 (2006), DOI: 10.1109/LED.2005.860882. Crossref, Web of Science, Google Scholar
F. Marinoet al., Electron. Devices, IEEE Transactions on 57(1), 353 (2010), DOI: 10.1109/TED.2009.2035024. Crossref, Web of Science, Google Scholar
S. Yamakawaet al., Journal of Physics: Condensed Matter 21(17), 174 206 (2009), DOI: 10.1088/0953-8984/21/17/174206. Crossref, Web of Science, Google Scholar
S. Yamakawa, J. Branlard, M. Saraniti, and S. M. Goodnick, "High-field transport in GaN and AlGaN/GaN heterojunction field effect transistors," in 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14), M. Saraniti and U. Ravaioli, Eds., no. 110. Springer Proceedings in Physics, 206, pp. 133–138 . Google Scholar
W. Hackbusch, The frequency decomposition multi-grid algorithm," in Robust Multi–Grid Methods, Proceedings of the Fourth GAMM–Seminar23, ser. Notes on numerical fluid mechanics, ed. W. Hackbusch (Fried. Vieweg & Sohn, Braunschweig / Wiesbaden, 1989) pp. 96–105. Google Scholar
I. Knezevic, D. Vasileska and D. Ferry, IEEE Transaction Electron. Devices 49, 1019 (2002), DOI: 10.1109/TED.2002.1003723. Crossref, Web of Science, Google Scholar
D. Ferry, Superlattices and Microstructures 27, 61 (2000), DOI: 10.1006/spmi.1999.0800. Crossref, Web of Science, Google Scholar
U. Mishraet al., Proceedings of the IEEE 96(2), 287 (2008), DOI: 10.1109/JPROC.2007.911060. Crossref, Web of Science, Google Scholar