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SECOND BREAKDOWN AND SAFE OPERATING AREA OF E-MODE POWER pHEMTs

VIPINDAS PALA

Center of Industrial Electronics, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York - 12180, USA

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and

T. PAUL CHOW

Center of Industrial Electronics, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York - 12180, USA

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https://doi.org/10.1142/S0129156411006751Cited by:0 (Source: Crossref)

Abstract

The safe operating area of E-pHEMTs have been explored using device simulations. It is proposed that the second breakdown is triggered by the debiasing of the channel potential due to the gate reverse current at high drain voltages. A mathematical description of this behavior and experimental results are presented.

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References

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Vol. 20, No. 03

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SECOND BREAKDOWN AND SAFE OPERATING AREA OF E-MODE POWER pHEMTs

Abstract

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