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Keyword: Second Breakdown (1)	26 Mar 2025	Run
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articleNo Access
SECOND BREAKDOWN AND SAFE OPERATING AREA OF E-MODE POWER pHEMTs
- VIPINDAS PALA and
- T. PAUL CHOW
International Journal of High Speed Electronics and Systems01 Sep 2011
Preview Abstract
The safe operating area of E-pHEMTs have been explored using device simulations. It is proposed that the second breakdown is triggered by the debiasing of the channel potential due to the gate reverse current at high drain voltages. A mathematical description of this behavior and experimental results are presented.

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