Terahertz DevicesNo Access

FET THZ DETECTORS OPERATING IN THE QUANTUM CAPACITANCE LIMITED REGION

BERARDI SENSALE-RODRIGUEZ

Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556, USA

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LEI LIU

Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556, USA

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RONGHUA WANG

Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556, USA

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TOM ZIMMERMANN

Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556, USA

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PATRICK FAY

Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556, USA

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DEBDEEP JENA

Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556, USA

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, and

HUILI GRACE XING

Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556, USA

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https://doi.org/10.1142/S0129156411006891Cited by:6 (Source: Crossref)

Abstract

In this paper, we report our studies on field effect transistor (FET) THz detectors operating in the non-resonant mode based on the Dyakonov-Shur plasma wave detection theory, where the quantum capacitance dominates. The influence of quantum capacitance in detector response is theoretically developed and numerically simulated at low and high frequencies. Fundamental constraints in the upper frequency limit are also analyzed for FET THz detectors based on various materials, showing advantages of GaN for 8 - 20 THz applications. Experiments at microwave and THz frequencies have been carried out for GaN based devices showing agreement with the theory.

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