Special Issue on 3rd Russia–Japan–USA Symposium on Fundamental & Applied Problems of Terahertz Devices and Technologies (RJUS TeraTech-2014), June 17–21, New York, USA; Edited by Michael ShurNo Access
Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications
https://doi.org/10.1142/S0129156415200013Cited by:11 (Source: Crossref)
Abstract
A metamorphic high electron mobility transistor (MHEMT) with “zig–zag” –like gate of a length of 46 nm and cut-off frequencies for the current and power gain fr=0.13 THz and fmax=0.63 THz respectively was fabricated on the base of InAlAs/InGaAs/InAlAs nanoheterostructure.
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