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articleNo Access
Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications
International Journal of High Speed Electronics and Systems01 Mar 2015
Preview Abstract
A metamorphic high electron mobility transistor (MHEMT) with “zig–zag” –like gate of a length of 46 nm and cut-off frequencies for the current and power gain $f_{r} = 0.13$ THz and $f_{\max} = 0.63$ THz respectively was fabricated on the base of InAlAs/InGaAs/InAlAs nanoheterostructure.
chapterNo Access
Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications
Fundamental & Applied Problems of Terahertz Devices and Technologies23 Aug 2015
Preview Abstract
A metamorphic high electron mobility transistor (MHEMT) with “zig–zag” –like gate of a length of 46 nm and cut-off frequencies for the current and power gain f_T = 0.13 THz and f_max = 0.63 THz respectively was fabricated on the base of InAlAs/InGaAs/InAlAs nanoheterostructure.

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