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Memristor-Based Material Implication Logic: Prelude to In-Memory Computing

Anas Mazady

Northrop Grumman Corporation, Baltimore, MD 212, USA

E-mail Address: aalvee_asad.kausani@uconn.edu

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and

Mehdi Anwar

Electrical and Computer Engineering Department, University of Connecticut, Storrs, CT 06269, USA

E-mail Address: a.anwar@uconn.edu

Corresponding author.

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https://doi.org/10.1142/S0129156423500210Cited by:0 (Source: Crossref)

This article is part of the issue:

Special Issue on Nanotechnology in Electronics, Photonics, Biosensors, and Energy Systems
Guest Editors: F. Jain, C. Broadbridge, M. Gherasimova and H. Tang

Abstract

We report experimental demonstration of Material Implication (IMP) logic using ZnO nanowire-based memristors. The logic is demonstrated with a high-to-low resistance ratio of only five. This imposes much less stringent requirements on memristor performance that can enable IMP logic operation with lower bit error rates. Process independence on memristor and memristor-based IMP logic performance is demonstrated, and a more practical implementation of logic is made by relaxing the restriction imposed on the ranges of the values of on and off state resistances. IMP logic is validated up to a clock frequency of 100 KHz.

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