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SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES

ALEXEY VERT

General Electric Global Research Center, Niskayuna, NY 12309, USA

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STANSILAV SOLOVIEV

General Electric Global Research Center, Niskayuna, NY 12309, USA

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JODY FRONHEISER

General Electric Global Research Center, Niskayuna, NY 12309, USA

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, and

PETER SANDVIK

General Electric Global Research Center, Niskayuna, NY 12309, USA

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https://doi.org/10.1142/S0129156409006114Cited by:0 (Source: Crossref)

Abstract

A solar blind 4H-SiC single photon avalanche diode (SPAD) is reported. The SPAD with separate absorption and multiplication layers was designed for operation with low dark counts. A thin film optical filter deposited on a sapphire window of the device package provided sensitivity in the wavelength range between 240 and 280 nm with a very high solar photon rejection ratio. An estimated dark current of 0.4 pA (0.75 nA/cm2) at a gain of 1000 was measured on a device with an effective mesa diameter of 260 µm. A single photon detection efficiency of 9% (linear mode) and 9.5% (gated Geiger mode) were achieved at a wavelength of 266 nm for the same device. Corresponding dark count rate and dark count probability were 600 Hz and 4×10^-4.

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Vol. 19, No. 01

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SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES

Abstract

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