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THE MONTE CARLO METHOD APPLIED TO CARRIER TRANSPORT IN Si/SiGe QUANTUM WELLS

V. A. VETTCHINKINA

Department of Physics, Lund University, Sölvegatan 14A, S–223 62 Lund, Sweden

Corresponding author.

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A. BLOM

Department of Physics, Lund University, Sölvegatan 14A, S–223 62 Lund, Sweden

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, and

M. A. ODNOBLYUDOV

A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia

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https://doi.org/10.1142/S021797920503222XCited by:1 (Source: Crossref)

Abstract

We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.

Keywords:

PACS: 02.70.Uu, 73.21.Fg, 73.63.Hs

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