ZnOSnO₂ thin films were deposited on glass substrates (Corning#1737) by DC magnetron sputtering. In this works, we examined a doping effect on a ZnO target on transparent conducting properties. ZnO:Al(4wt%), and ZnO:Ga(6wt%) targets were used for a dopant-free ZnO target. Substrate temperature was held at 250°C. The current ratio δ was defined as I_Zn/I_Z+I_Sn (ZnO target current divided by the sum of ZnO and SnO₂ target currents). Compositions of as-deposited films were changed with the current ratio δ. In the ZnO-SnO₂ system, amorphous transparent films appeared over the range of 0.33≤δ≤0.73. On the other hand, in the ZnO:Al(4wt%)-SnO₂ and ZnO:Ga(6wt%)-SnO₂ systems, they appeared over the range of 0.20≤δ≤0.80 and 0.33≤δ≤0.80, ≤δ≤ respectively. The minimum resistivity of amorphous films was about 3.0×10^-2 Ωcm for all the systems. Al, Ga doping effect on film resistivity was not clear very much. But optical transparencies were 80-90% in visible region, 10% higher than those of ZnO-SnO₂ system at average. Optical band gap for the films with the same current ratio δ also was enhanced by the Al, Ga doping.

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