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ZnOSnO2 thin films were deposited on glass substrates (Corning#1737) by DC magnetron sputtering. In this works, we examined a doping effect on a ZnO target on transparent conducting properties. ZnO:Al(4wt%), and ZnO:Ga(6wt%) targets were used for a dopant-free ZnO target. Substrate temperature was held at 250°C. The current ratio δ was defined as IZn/IZ+ISn (ZnO target current divided by the sum of ZnO and SnO2 target currents). Compositions of as-deposited films were changed with the current ratio δ. In the ZnO-SnO2 system, amorphous transparent films appeared over the range of 0.33≤δ≤0.73. On the other hand, in the ZnO:Al(4wt%)-SnO2 and ZnO:Ga(6wt%)-SnO2 systems, they appeared over the range of 0.20≤δ≤0.80 and 0.33≤δ≤0.80, ≤δ≤ respectively. The minimum resistivity of amorphous films was about 3.0×10-2 Ωcm for all the systems. Al, Ga doping effect on film resistivity was not clear very much. But optical transparencies were 80-90% in visible region, 10% higher than those of ZnO-SnO2 system at average. Optical band gap for the films with the same current ratio δ also was enhanced by the Al, Ga doping.
The adsorption of cisplatin on pristine monolayer graphene (MLG), pristine bilayer graphene (BLG) and Al-doped BLG (Al-BLG) was investigated using density functional theory. The obtained results showed that pristine MLG and pristine BLG were not sensitive to cisplatin. Adsorption energy can be primarily influenced by the atomic species rather than the adsorption position. Moreover, it is strong chemisorption of hollow-site Al-BLG (H-Al-BLG) toward cisplatin. The most stable configurations are the Pt or Cl atom interaction with the Al atom of H-Al-BLG. In conclusion, H-Al-BLG is a kind of potential high quality delivery carrier for anticancer cisplatin.