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Research PapersNo Access

THE ELECTRONIC BAND STRUCTURE OF GaN, GaAs AND In_xGa_1-xAs_1-yN_y ALLOYS

Department of Physics, Middle East Technical University, Ankara 06531, Turkey

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and

ŞENAY KATIRCIOĞLU

Department of Physics, Middle East Technical University, Ankara 06531, Turkey

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https://doi.org/10.1142/S0217979207037922Cited by:1 (Source: Crossref)

Abstract

The electronic band structure of GaN and GaAs has been investigated by ETB to obtain the band gap bowing of In_xGa_1-xAs_1-yN_y alloys lattice matched to GaAs. The ETB method has been formulated for sp³d² basis and nearest neighbor interactions of the compounds, and its energy parameters have been derived from the results of the present first principles calculations carried out on GaN and GaAs. It has been found that the present ETB energy parameters are capable of producing the electronic band structure of corresponding compounds and the large bowing parameter of InGaAsN alloy.

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Vol. 21, No. 25

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Received 22 November 2006

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