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THE REASON FOR THE HIGH EMISSION EFFICIENCY OF GaInN/GaN BASED LEDS
https://doi.org/10.1142/S021797920804819XCited by:1 (Source: Crossref)
Abstract
We explain the mechanism of defect screening in GaInN/GaN quantum wells, which are used as active layers in white and blue light emitting diodes (LEDs). Despite the fact that these devices have now been commercially available for some time, the reason for the high luminescence efficiency had not been really understood. The high defect densities in these devices commonly would not allow the use as an optical emitter. We present the mechanism turning an actually poor-quality material into a powerful optical emitter.
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