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STRUCTURAL AND OPTICAL PROPERTIES OF γ-MO₂N THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090, Russia

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T. KHASANOV

Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090, Russia

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V. A. KOCHUBEY

Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090, Russia

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L. D. POKROVSKY

Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090, Russia

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, and

T. A. GAVRILOVA

Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090, Russia

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https://doi.org/10.1142/S0217979209053813Cited by:6 (Source: Crossref)

Abstract

Molybdenum nitride films γ-Mo₂N/Si have been fabricated with reactive magnetron sputtering in (N₂ + Ar) gas mixture. Phase composition of the films has been defined with reflection high energy electron diffraction. Refractive index and extinction coefficient of γ-Mo₂N have been evaluated with laser ellipsometry at λ = 632.8 and 488.0 nm. Upper limit of γ-Mo₂N film thickness measurable with laser ellipsometry has been found to be ~80 nm.

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