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Surfaces, Interfaces and Surface Analysis of MaterialsNo Access

P-TYPE ALUMINIUM-NITROGEN CO-DOPED ZnO FILMS PREPARED BY THERMAL OXIDATION OF SPUTTERED Zn₃N₂:Al PRECURSORS

Department of Chemical and Materials Engineering, The University of Auckland, Private Bag 92019, Auckland, New Zealand

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Department of Chemical and Materials Engineering, The University of Auckland, Private Bag 92019, Auckland, New Zealand

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Department of Mechanical Engineering, The University of Auckland, Private Bag 92019, Auckland, New Zealand

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Department of Chemical and Materials Engineering, The University of Auckland, Private Bag 92019, Auckland, New Zealand

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https://doi.org/10.1142/S0217979210065970Cited by:3 (Source: Crossref)

Abstract

P-type (Al, N) co-doped ZnO films have been prepared by thermal oxidation of sputtered Zn₃N₂:Al precursor films. The Zn₃N₂:Al precursors are deposited by RF magnetron sputter and then annealed in oxygen atmosphere at different temperatures. The doped ZnO films are characterized by XRD, XPS and Hall effect measurement. The results indicate that the ZnO films only show p-type conductivity with an annealing in a temperature window: ZnO films show the best p-type characteristics with a hole concentration of 4.2 × 10¹⁷cm^-3, mobility of 0.52 cm/V.s and resistivity of 28Ωcm after an annealing at 550°C. Using these p-type ZnO films, ZnOp-n junctions are prepared which show good diode characteristics. The chemical states of N and Al dopants in the ZnO host material are investigated by XPS method after annealing at different temperatures; and the doping mechanisms are discussed based on the XPS results.

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Vol. 24, No. 15n16

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Received 20 October 2008

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