Surfaces, Interfaces and Surface Analysis of MaterialsNo Access

CHARACTERISTICS OF DLC FILMS INCORPORATED HMDS BY RF PECVD

TAE GYU KIM

Department of Nano System & Process Engineering, Pusan National University, Miryang, 627-706, Korea

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JEONG SEOK OH

School of Mechanical Engineering, Pusan National University, 30 Jangjeon-dong, Geumjeong-gu, Busan, 609-735, Korea

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HAN KI YOON

Department of Mechanical Engineering, Dong-eui University, Busanjin-gu, Busan, 614-714, Korea

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HYE SUNG KIM

Department of Nano Materials Engineering, Pusan National University, Miryang, 627-706, Korea

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https://doi.org/10.1142/S0217979210065982Cited by:1 (Source: Crossref)

Abstract

Silicon incorporated diamond-like carbon films up to 6.2 at. % (DLC-Si) were deposited onto a high speed steel samples by using a radio frequency plasma-enhanced chemical vapor deposition method. The influence of silicon doping on chemical composition, bonding structure, hardness, and adhesion of DLC films was investigated. Hexamethyldisilane (HMDS) gas was used as a silicon source with Ar carrier gas ranging from 0 to 15 sccm. Also, the mixtures of methane (CH₄) and Ar gases were used as precursor gases. The addition of silicon into the DLC film was found to lead an increase of bonding ratio (sp³/sp²), hardness and critical adhesion

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