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INVESTIGATION OF Zr_xLa_1-xO_y NANOCRYSTALLITES IN METAL–HIGH-k OXIDE–SILICON-TYPE NONVOLATILE MEMORY DEVICES

ALI BAHARI

Department of Physics, University of Mazandaran, Babolsar, 4741695447, Iran

Corresponding author.

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and

REZA GHOLIPUR

Department of Physics, University of Mazandaran, Babolsar, 4741695447, Iran

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https://doi.org/10.1142/S0217979212501913Cited by:7 (Source: Crossref)

Abstract

To investigate characterization of Zr_xLa_1-xO_y nanocrystallites as a buffer oxide in forming the metal-oxide-semiconductor field effect transistors (MOSFETs) structure, we synthesized Zr_xLa_1-xO_y nanocrystallites by sol–gel method. Moreover, from the solution prepared, thin films on silicon wafer substrates have been realized by "dip-coating" with a pulling out speed of 5 cm min^-1. The structure, morphology, electrical properties of thin film was examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) techniques. Electrical property characterization was performed with metal-oxide-semiconductor (MOS) structures through capacitance–voltage (C–V) and current density–voltage (J–V) measurements. The leakage current density was below 1.0 ×10^-6A/cm² at 1 MV/cm.

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