Structure and electronic properties of GaN tubelike clusters and single-walled GaN nanotubes
Abstract
Extensive studies of the geometric structures, stabilities and electronic properties of gallium nitride (GaN)n tubelike clusters and single-walled GaN nanotubes (GaNNTs) were carried out using density-functional theory (DFT) calculations. A family of stable tubelike structures with Ga–N alternating arrangement was observed when n≥8 and their structural units (four-membered rings (4MRs) and six-membered rings (6MRs)) obey the general developing formula. The size-dependent properties of the frontier molecular orbital surfaces explain why the long and stable tubelike clusters can be obtained successfully. They also illustrate the reason why GaNNTs can be synthesized experimentally. Our results also reveal that the single-walled GaNNTs, which as semiconductors with a large bandgap, can be prepared by using the proper assembly of tubelike clusters.
| You currently do not have access to the full text article. |
|---|
