Photoconductivity of pure and rare-earth doped p-GaSe single crystals
Abstract
Photoconductivity characteristic of undoped and gadolinium (Gd)/dysprosium (Dy) co-doped layered p-GaSe semiconductor has been experimentally investigated. A model is proposed to explain the obtained results. The creating possibility of multi-band photo-detectors with stable and reproducible parameters is shown and characteristics based on single crystals of p-GaSe are activated with mentioned rare-earth ions with concentration of 10−2÷10−1 at.%.
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