Narrow Results

Photoconductivity characteristic of undoped and gadolinium (Gd)/dysprosium (Dy) co-doped layered $p$-GaSe semiconductor has been experimentally investigated. A model is proposed to explain the obtained results. The creating possibility of multi-band photo-detectors with stable and reproducible parameters is shown and characteristics based on single crystals of $p$-GaSe are activated with mentioned rare-earth ions with concentration of $10^{-2}÷10^{-1}$ at.%.

n-InSe single crystals were grown by the Bridgman method. Electroluminescence in undoped and rare-earth-doped (Dy and Er) crystals has been experimentally studied. It has been established that in both groups of crystals, electroluminescence is observed at $T\le$ 160–165K in the wavelength range $\lambda \approx 0.900$–1.150$\mu$m, regardless of the values of initial dark resistivity (${\rho }_{D0}$) and concentration (N). The volt-brightness characteristics and the dependence of brightness on the current strength have been investigated. It was found that the brightness also depends on the values of initial dark resistivity and concentration of the impurities. The highest luminescence brightness and the most stable and reproducible characteristics of electroluminescence are observed in doped crystals. The features of electroluminescence in undoped and rare-earth-doped crystals obey the criteria of theoretical concepts developed for spatially homogeneous crystalline semiconductors. All experiments were comparatively performed for both undoped and rare-earth-doped crystals.