MONTE CARLO SIMULATIONS OF ELECTRON TRANSPORT IN WURTZITE PHASE GaN MESFET INCLUDING TRAPPING EFFECT

Trapping of hot electron behavior by trap centers located in the buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The simulated results show that trap centers are responsible for current collapse in GaN MESFET at low temperatures. These electrical traps degrade the performance of the device at low temperatures. On the other hand, at high temperatures, the electrical performances are improved due to electron emission from the trap centers. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted drain current and other electrical characteristics for the simulated device including the trapping center effects show much closer agreement with the available experimental data than without trap center effects.