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A MULTI-BAND LOW NOISE AMPLIFIER WITH GAIN FLATNESS AND BANDWIDTH ENHANCEMENT

SAN-FU WANG

Department of Electronic Engineering, Ming Chi University of Technology, Taishan, New Taipei City, Taiwan, R.O.C.

Corresponding author.

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JAN-OU WU

Department of Electronic Engineering, De Lin Institute of Technology, Tu-Cheng, New Taipei City, Taiwan, R.O.C.

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YANG-HSIN FAN

Department of Computer Science and Information Engineering, National Taitung University, Taitung, Taiwan, R.O.C.

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, and

JHEN-JI WANG

Department of Electrical Engineering, Yuan Ze University, Taoyuan, Taiwan, R.O.C.

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https://doi.org/10.1142/S0218126614500170Cited by:5 (Source: Crossref)

Abstract

In this paper, a differential multi-band CMOS low noise amplifier (LNA) is proposed that is operated within a range of 1500–2700 MHz with input matching capacitor switching and gain flatness performance enhancement technique. Traditional multi-band LNAs have poor performances on gain flatness performance. Therefore, we propose a new multi-band LNA which obtain good gain flatness performance by integrating the characteristics of the transistor trans-conductance and LC resonant load. The new LNA can also achieve a tunable frequency at different matching capacitance conditions. The post-layout simulation results shows that the voltage gain is between 19.3 dB and 22.4 dB, the NF is less than 2.5 dB, and the 1-dB compression point is about -5.1 dBm. The LNA consumes 17.79 mW under 1.8 V supply voltage in TSMC 0.18-um RF CMOS process.

This paper was recommended by Regional Editor Masakazu Sengoku.

Keywords:

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