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A TUNABLE MULTIBAND CMOS LNA FOR MOBILE WIMAX WITH HIGH LINEARITY

ABBAS BAYRAMNEJAD

Department of Electrical Engineering, K.N. Toosi University of Technology, Tehran, Iran

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DAVUD ASEMANI

Department of Electrical Engineering, K.N. Toosi University of Technology, Tehran, Iran

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, and

SAADAN ZOKAEI

Department of Electrical Engineering, K.N. Toosi University of Technology, Tehran, Iran

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https://doi.org/10.1142/S0218126613500114Cited by:5 (Source: Crossref)

Abstract

In this paper, a multiband low-noise amplifier (LNA) with capability of band tuning is proposed to support the Mobile WiMAX (IEEE 802.16e) standard associated with a large IIP3 at RF frequencies using multi-gated linearization techniques. Proposed LNA architecture has been optimized in terms of linearity based on a comparative analysis between four tunable LNA structures. In addition, a general survey is performed on linearization techniques (multiple-gated transistors, Derivative Superposition (DS), Modified DS). Proposed LNA is constituted of multi-gated linearization technique. Design and simulations have been realized in 0.13 μm RF CMOS process considering a power supply of 1.2 V. Proposed LNA exhibits an IIP3 of +8.8 dBm, +14.3 dBm, and +6.4 dBm at the lower, middle, and upper bands of WIMAX, respectively. It results in a power gain of 10 dB, a noise figure below 2.5 dB and S₁₁ of -11.5 dB, -8.6 dB, and -12.7 dB at the lower, middle, and upper bands. The related power dissipations are 10 mW, 9.9 mW, and 9.4 mW at the lower, middle, and upper bands, respectively.

This paper was recommended by Regional Editor Piero Malcovati.

Keywords:

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