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A 0.55 V Bandgap Reference with a 59 ppm/°C Temperature Coefficient

    https://doi.org/10.1142/S0218126619501202Cited by:24 (Source: Crossref)

    This paper presents a novel low power, low voltage CMOS bandgap reference (BGR) that overcomes the problems with the existing BJT-based reference circuits by using a MOS transistor operating in sub-threshold region. A proportional to absolute temperature (PTAT) voltage is generated by exploiting the self-bias cascode branch, while a Complementary to Absolute Temperature (CTAT) voltage is generated by using the threshold voltage of the transistor. The proposed circuit is implemented in 65nm CMOS technology. Post-layout simulation results show that the proposed circuit works with a supply voltage of 0.55V, and generates a 286mV reference voltage with a temperature coefficient of 59ppm/C. The circuit takes 413nA current from 0.55V supply and occupies 0.00986mm2 of active area.

    This paper was recommended by Regional Editor Piero Malcovati.