STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF TiO2 THIN FILM DEPOSITED ON THE NANO POROUS SILICON TEMPLATE
Abstract
The porous silicon (PSi), which is produced by the electrochemical etching, has been used as a substrate for the growth of the titanium oxide (TiO2) thin films. By using the EBPVD method, TiO2 thin films have been deposited on the surface of the PSi substrate. TiO2/PSi layers were annealed at the temperature of 400∘C, 500∘C and 600∘C for different tests. The morphology and structures of layers were investigated by the scanning electron microscopy (SEM) and X-ray diffraction (XRD). The current–voltage characteristic curves of samples and the ideality factor of heterojunction were studied. The results showed that the electrical properties of the samples change with increase in the annealing temperature. The optical properties of the prepared samples were investigated by using UV–Vis and photoluminescence (PL) spectroscopy. Green light emission of the PSi combined with the blue light and violet–blue emission obtained from the TiO2/PSi PL spectra. The results showed that the optical band gap energy of the PSi has increased from 1.86eV to 2.93eV due to the deposition of TiO2 thin film.
