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SYSTEMATIC EXPLORATION OF THE EFFECTS OF CR-DOPING ON MICROSTRUCTURE, INSULATING, AND FERROELECTRIC PROPERTIES OF BiFeO₃ THIN FILM

HUITING SUI

School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China

Advanced Ceramics Institute of Zibo New & High-Tech Industrial Development Zone, Zibo 255000, P. R. China

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HUAJUN SUN

School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China

Advanced Ceramics Institute of Zibo New & High-Tech Industrial Development Zone, Zibo 255000, P. R. China

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XIAOFANG LIU

School of Chemistry, Chemical Engineering and Life Sciences, Wuhan University of Technology, Wuhan 430070, P. R. China

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SHANSHAN GUO

School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China

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HUAN YANG

School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China

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, and

RENXIN XU

School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China

E-mail Address: renxinxu@whut.edu.cn

Corresponding author.

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https://doi.org/10.1142/S0218625X18501664Cited by:7 (Source: Crossref)

Abstract

BiFe $_{1 - x}$ Cr_xO₃ ( $x$ BFCO, $x = 0.01$ , 0.02, 0.03, 0.04, 0.05) thin films were successfully fabricated onto Pt(111)/TiO₂/SiO₂/Si substrate via a solgel process. The correlation between microstructure and insulating, ferroelectric properties of $x$ BFCO thin films are investigated. The leakage behavior for all the thin films is in accordance with the Ohmic conduction and FN Tunneling emission during low and high electric field region, respectively. Compared with the pure BFO, all the thin films with Cr $^{3 +}$ doping possess reduced leakage current density by 1–2 orders of magnitude, with the lowest value approximately 10 $^{- 4}$ at 200kV/cm. Moreover, the 0.04BFCO thin film exhibits the maximum remanent polarization ( $P_{r}$ ) value of 29.8 $μ$ C/cm² with a great fatigue behavior, which could be ascribed to the absence of impurity phase and reduced leakage current.

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