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INFLUENCE OF SUBSTRATE TEMPERATURE ON THE COMPOSITION, ELECTRICAL RESISTIVITY AND INFRARED EMISSIVITY OF PtO_x FILMS

WENBO KANG

http://orcid.org/0000-0003-4645-7826

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China

E-mail Address: decides@163.com

Corresponding author.

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DONGMEI ZHU

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China

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XIAOKE LU

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China

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ZHIBIN HUANG

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China

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WANCHENG ZHOU

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China

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, and

FA LUO

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China

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https://doi.org/10.1142/S0218625X19500562Cited by:0 (Source: Crossref)

Abstract

PtO_x films were deposited by direct current (DC) reactive magnetron sputtering in Ar/O₂ mixture atmosphere at substrate temperatures ranging from 200^∘C to 400^∘C. The influence of substrate temperature on the structure, morphology, composition, electrical resistivity and infrared emissivity of PtO_x films was studied. The X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD) results revealed that the as-deposited amorphous PtO_x films were mainly composed of PtO and PtO₂ phases. It was found that with the increase in the substrate temperature, the proportion of PtO phase in the films increased, while the electrical resistivity and infrared emissivity of the films decreased with the increasing substrate temperature.

Keywords:

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