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PERFORMANCE LIMITS OF SIMULATION MODELS FOR NOISE CHARACTERIZATION OF MM WAVE DEVICES

ALI ABOU-ELNOUR

Ajman University of Science and Technology, Faculty of Engineering, Electrical Engineering Department, P. O. Box 346 Ajman, United Arab Emirates

On leave from Electronic and Communication Departments, Faculty of Engineering, Ain-Shams University, Cairo, Egypt.

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https://doi.org/10.1142/S0219477507003957Cited by:0 (Source: Crossref)

Abstract

Based on Boltzmann transport equation, the drift-diffusion, hydrodynamic, and Monte-Carlo physical simulators are accurately developed. For each simulator, the model equations are self-consistently solved with Poisson equation, and with Schrödinger equation when quantization effects take place, in one and two-dimensions to characterize the operation and optimize the structure of mm-wave devices. The effects of the device dimensions, biasing conditions, and operating frequencies on the accuracy of results obtained from the simulators are thoroughly investigated. Based on physical understanding of the models, the simulation results are analyzed to fully determine the limits at which a certain device simulator can be accurately and efficiently used to characterize the noise behavior of mm-wave devices.

Keywords:

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