SPECIAL ISSUE ON THE 13TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, PART I; EDITED BY R. SURISNo Access

MBE GROWTH OF GaAs NANOWHISKERS STIMULATED BY THE ADATOM DIFFUSION

V. G. DUBROVSKII

Laboratory of Physics of Semiconductor Heterostructures, Ioffe Physical Technical Institute of Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, Russia

St. Petersburg Physical Technical Centre of the Russian Academy of Sciences for Research and Education, Khlopina 8/3, St. Petersburg 195220, Russia

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I. P. SOSHNIKOV

Laboratory of Physics of Semiconductor Heterostructures, Ioffe Physical Technical Institute of Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, Russia

St. Petersburg Physical Technical Centre of the Russian Academy of Sciences for Research and Education, Khlopina 8/3, St. Petersburg 195220, Russia

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A. A. TONKIKH

Laboratory of Physics of Semiconductor Heterostructures, Ioffe Physical Technical Institute of Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, Russia

St. Petersburg Physical Technical Centre of the Russian Academy of Sciences for Research and Education, Khlopina 8/3, St. Petersburg 195220, Russia

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V. M. USTINOV

Laboratory of Physics of Semiconductor Heterostructures, Ioffe Physical Technical Institute of Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, Russia

St. Petersburg Physical Technical Centre of the Russian Academy of Sciences for Research and Education, Khlopina 8/3, St. Petersburg 195220, Russia

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G. E. CIRLIN

Laboratory of Devices and Methods of Epitaxial Nanotechnologies, Institute for Analytical Instrumentation of Russian Academy of Sciences, Rizhskii 26, St. Petersburg 190103, Russia

St. Petersburg Physical Technical Centre of the Russian Academy of Sciences for Research and Education, Khlopina 8/3, St. Petersburg 195220, Russia

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YU. B. SAMSONENKO

Laboratory of Devices and Methods of Epitaxial Nanotechnologies, Institute for Analytical Instrumentation of Russian Academy of Sciences, Rizhskii 26, St. Petersburg 190103, Russia

St. Petersburg Physical Technical Centre of the Russian Academy of Sciences for Research and Education, Khlopina 8/3, St. Petersburg 195220, Russia

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https://doi.org/10.1142/S0219581X07004626Cited by:2 (Source: Crossref)

Abstract

The growth mechanisms of GaAs nanowhiskers (NWs) during molecular beam epitaxy (MBE) are studied theoretically and experimentally. A kinetic model of the diffusion-induced NW growth is presented that allows one to predict the dependence of NW length on the drop radius and on the technologically controlled MBE growth conditions. The results of scanning electron microscopy studies of GaAs NWs grown at different conditions on the GaAs(111)B surface activated by Au are presented and analyzed. It is shown that the length of NWs increases with decreasing the drop radius and with decreasing the deposition rate of GaAs, while its temperature dependence has a certain maximum. The aspect ratio of MBE-grown GaAs NWs is higher than 100. The maximum length of NWs is several times larger than the effective thickness of the deposited GaAs. The obtained results demonstrate that the NW growth is controlled by the adatom diffusion toward their tip rather than by the adsorption-induced vapor–liquid–solid mechanism. The growth conditions' influence on the NW morphology may be used for the controlled fabrication of NWs by MBE for different applications.

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