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III-nitride materials have attracted wide interests for optoelectronic and electronic applications due to their unique and tunable semiconducting and optical properties. Aluminum nitride (AlN) exhibits an ultra-wide bandgap of 6.2eV and wide transparency window from ultraviolet to mid-infrared, making it a promising candidate as an anti-reflective coating (ARC) material on silicon for photovoltaic (PV) devices. In this work, ray tracing is utilized to investigate the optical properties of AlN ARC on 150$\mu$m-thick c-Si absorber. AlN with thicknesses of 60–90nm are studied and the effects towards light absorption (within 300–1200nm wavelength region) and short-circuit current density ($J_{\mathrm{\text{SC}}})$ of the solar cell are analyzed. In the ray tracing, planar c-Si absorber without an ARC is used as a reference. The reference condition exhibits weighted average reflection (WAR) of 39.8% within the 300–1200nm wavelength region with $J_{\mathrm{\text{SC}}}$ of 25.49mA/cm². AlN with 80nm is found to be the optimum ARC thickness, which leads to the enhanced broadband absorption with WAR of 19.7% within the spectral region. This thickness represents the highest $J_{\mathrm{\text{SC}}}$ achieved in this work (35.71mA/cm${}^2)$.

III-nitride materials have attracted wide interests for optoelectronic and electronic applications due to their unique and tuneable semiconducting and optical properties. Gallium nitride (GaN) exhibits wide bandgap of 3.42eV, high thermal and chemical stability, with a strong potential to act as an electron selective contact (i.e., emitter) in GaN/Si heterojunction solar cells. However, despite all the advantages, to date, there is no published research that has which utilized GaN as an emitter in the GaN/Si heterojunction solar cells. In this work, SCAPS-1D simulation is utilized to investigate the electrical properties of GaN emitter on 150$\mu$m-thick monocrystalline silicon (mono c-Si) absorber layer in GaN/Si heterojunction solar cell architecture. GaN emitter with the thickness of 30–120nm are studied and the effects toward open-circuit voltage ($V_{\mathrm{\text{OC}}}$), short-circuit current density ($J_{\mathrm{\text{SC}}})$, fill factor (FF), power conversion efficiency (PCE) and external quantum efficiency (EQE) of the solar cell are analyzed. The optimum thickness of the GaN emitter is found to be 60nm with $J_{\mathrm{\text{SC}}}$ of 37.53mA/cm², $V_{\mathrm{\text{OC}}}$ of 628.73mV and PCE of 19.43%. The findings show the potential of the GaN/Si heterojunction solar cell for the future of the PV industry, especially for applications in harsh and extreme conditions.

Dithallium phthalocyanine (Tl₂Pc) was synthesized by direct reaction of Tl metal with 1,2-dicyanobenzene. A thin film of the product was prepared by vacuum deposition on KCl single-crystalline substrate and its structure and epitaxy were examined by electron microscopy. The crystal structure of the thin film was the same as the orthorhombic structure reported previously. The film grew epitaxially on KCl substrate as expected from point-on-line coincidence. The UV-vis spectrum of the film was measured and compared with that of an as-synthesized powder sample. The UV-vis spectrum of the thin film of Tl₂Pc showed some differences from that of the powder in the visible region, which may result from the difference in molecular orientation. The electrical resistance of a Tl₂Pc thin film deposited on mica was about 10¹⁰Ω in our measuring set-up, which means that the film does not show high conductivity.

In this work, we investigate the influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also, anisotropy in the growth is involved. We found from computer simulations for the simple cubic lattice and solid-on-solid model that the surface morphology changes with increasing temperature from isotropically distributed isolated small islands through anisotropic 1D stripes to larger 2D anisotropic islands and again randomly distributed single atoms. The transition is also marked in height–height correlation function dependence on temperature as directly seen by snapshots from simulations. The results are in good qualitative agreement with already published results of kinetic Monte Carlo simulations as well as with some experimental data.

Using a kinetic, Monte Carlo model influence of Schwoebel barriers on morphology of growing films was investigated. With the increase of the deposited dose, transition from 2D to 3D growth mode within Stranski–Krastanow (SK) region without changing interlayer exchange and the growth parameters, was observed. The influence of interlayer atomic exchange on 2D island density, average and maximum island sizes in different atomic layers of thin film were in question. The enlargement of island sizes with the increase of the atomic layer number was demonstrated. This effect is much more pronounced in heterosystems, where atomic hops in the upper layer dominate over hops to the lower layer. The mechanism for transition from two-dimensional to three-dimensional growth mode in one growth process was suggested.

The growth mechanisms of GaAs nanowhiskers (NWs) during molecular beam epitaxy (MBE) are studied theoretically and experimentally. A kinetic model of the diffusion-induced NW growth is presented that allows one to predict the dependence of NW length on the drop radius and on the technologically controlled MBE growth conditions. The results of scanning electron microscopy studies of GaAs NWs grown at different conditions on the GaAs(111)B surface activated by Au are presented and analyzed. It is shown that the length of NWs increases with decreasing the drop radius and with decreasing the deposition rate of GaAs, while its temperature dependence has a certain maximum. The aspect ratio of MBE-grown GaAs NWs is higher than 100. The maximum length of NWs is several times larger than the effective thickness of the deposited GaAs. The obtained results demonstrate that the NW growth is controlled by the adatom diffusion toward their tip rather than by the adsorption-induced vapor–liquid–solid mechanism. The growth conditions' influence on the NW morphology may be used for the controlled fabrication of NWs by MBE for different applications.

Formation of semiconductor quantum dots from a metastable wetting layer with the effective thickness well below the critical thickness is observed experimentally in the InAs/GaAs(100) and in the Ge/Si(100) systems. The observed effect is explained within the frame of the kinetic theory of quantum dot formation in mismatched heteroepitaxial systems.

Bi₂FeCrO₆ thin films were epitaxially grown by pulsed laser deposition on (100)-oriented LaAlO₃, (LaAlO₃)_0.3(Sr₂LaTaO₆)_0.7 and SrTiO₃ single crystalline substrates with and without epitaxial CaRuO₃ buffered layer. The in-plane compressive strain induces monoclinic distortion of the Bi₂FeCrO₆ lattice cell. The strain originates from lattice mismatch between CaRuO₃ and single crystal substrates. The similar crystal structure of the substrate and the layer lead to coherent epitaxial growth of the heterostructures and avoid strain relaxation in particular for BFCO films deposited on LaAlO₃ substrates. The ferroelectric character is demonstrated for all grown BFCO films. The residual in-plane strain weakly affects the effective piezoelectric coefficient of BFCO layers.

Pb(Zr_0.65Ti_0.35)O₃ (PZT) thin films were deposited on SrRuO₃ (SRO) buffer layer coated LaAlO₃ (LAO) substrates by RF sputtering method. X-ray diffraction analyses indicate that the PZT thin films show epitaxial orientation and the in-plane epitaxial relationship between film and substrate is deduced as (001)[010]_PZT‖(001)[010]_SRO‖(001)[010]_LAO. Despite the Zr-richcomposition, observations using transmission electron microscopy reveal that the PZT thin films exhibited tetragonal phase, which was due to the clamping effect of the substrates. The clamping effecton the electrical properties, especially on the dielectric properties, was evaluated. Ferroelectric measurements show that PZT films with LAO/SRO substrates were fatigue-free. However, the test of dielectric property dependences on temperature manifests a relatively low Curie temperature of the PZT films. The loss tangent decreasedwith increase intemperature. Owing to the release of clamping stress, the loss tangent decreased dramatically while the temperature was approaching the phase transition temperature of PZT thin films.

Ability of epitaxial perovskite oxide ferroelectric films to maintain a poled polarization state on a long-term scale is crucial for advanced devices employing such films. Here polarization relaxation with time, or aging, is experimentally studied in epitaxial capacitor heterostructures of PbTiO₃ sandwiched between SrRuO₃ and Pt electrodes. The relaxation obeys logarithmic time-decay for the time 10²–10⁵s after poling pulses. The decay is by factor $\sim$10 slower than that reported for polycrystalline films. Our experimental results show that existing models are insufficient for epitaxial films.

The cubic polymorph of the binary transition metal pnictide (TMP) MnSb, c-MnSb, has been predicted to be a robust half-metallic ferromagnetic (HMF) material with minority spin gap ≳1 eV. Here, MnSb epilayers are grown by molecular beam epitaxy (MBE) on GaAs and In_0.5Ga_0.5As(111) substrates and analyzed using synchrotron radiation X-ray diffraction. We find polymorphic growth of MnSb on both substrates, where c-MnSb co-exists with the ordinary niccolite n-MnSb polymorph. The grain size of the c-MnSb is of the order of tens of nanometer on both substrates and its appearance during MBE growth is independent of the very different epitaxial strain from the GaAs (3.1%) and In_0.5Ga_0.5As (0.31%) substrates.

The D0${}_{22}$–Mn₃Ga ferrimagnet promises potential applications in spintronics due to its low magnetization, strong perpendicular magnetic anisotropy and high Curie temperature. In the form of thin and thick films, these properties are preserved. Here, we report on the structural and magnetic characterization of epitaxial D0${}_{22}$–Mn${}_{2.6}$Ga ultrathin films with thicknesses of 2nm, 5nm and 8nm grown on Cr buffer layers by magnetron sputtering. We found that the films are perfect single crystals with flat surfaces and Curie temperatures higher than 300K. The 2nm-thick ultrathin film has higher magnetization than that of the thicker films, likely due to uncompensated ferrimagnetic planes, along the c-axis, linked to the surface roughness at the atomic scale. These properties highly suit the requirements for the elaboration of spintronic devices such as magnetic tunnel junctions.

Colloidal inorganic nanocrystals (NCs) constitute an important class of advanced nanomaterials owing to the flexibility with which their dimensionality-dependent physical–chemical properties can be controlled by engineering their compositional, structural, and geometric features in the synthesis stage and the versatility with which they can be exploited in disparate technological fields, spanning from optoelectronics, energy conversion/production to catalysis, and biomedicine. In recent years, building upon knowledge acquired on the thermodynamic and kinetic processes that underlie NC evolution in liquid media, synthetic nanochemistry research has made tremendous advances, opening new possibilities for designing, creating, and mastering increasingly complex NC-based assemblies, in which sections of different materials are grouped together into free-standing, easily processable multifunctional nanocomposite systems. This chapter will provide an overview of this fast-growing research field by illustrating progress achieved in the wet-chemical development of last-generation breeds of so-called hybrid or heterostructured nanocrystals (HNCs) in asymmetric non-core/shell geometries, in which distinct material modules are interconnected in heterodimer, heterooligomer, and anisotropic multidomain architectures via heteroepitaxial bonding interfaces of limited extension. The focus will be on HNCs that incorporate at least one magnetic material component combined with semiconductors and/or plasmonic metals, which hold potential for generating enhanced, unconventional magnetic behavior, on one side, and diversified or even new properties and capabilities, on the other side. Various synthetic strategies, all based on the manipulation of seeded-growth techniques, will be described and rationally interpreted within the framework of the currently understood mechanisms of colloidal heteroepitaxy.