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EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi₂FeCrO₆ THIN FILMS

INRS Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada

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INRS Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada

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INRS Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada

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INRS Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada

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INRS Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada

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https://doi.org/10.1142/S1793604710000981Cited by:14 (Source: Crossref)

Abstract

Bi₂FeCrO₆ thin films were epitaxially grown by pulsed laser deposition on (100)-oriented LaAlO₃, (LaAlO₃)_0.3(Sr₂LaTaO₆)_0.7 and SrTiO₃ single crystalline substrates with and without epitaxial CaRuO₃ buffered layer. The in-plane compressive strain induces monoclinic distortion of the Bi₂FeCrO₆ lattice cell. The strain originates from lattice mismatch between CaRuO₃ and single crystal substrates. The similar crystal structure of the substrate and the layer lead to coherent epitaxial growth of the heterostructures and avoid strain relaxation in particular for BFCO films deposited on LaAlO₃ substrates. The ferroelectric character is demonstrated for all grown BFCO films. The residual in-plane strain weakly affects the effective piezoelectric coefficient of BFCO layers.

Keywords:

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Vol. 03, No. 01

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History

Received 5 March 2010

Accepted 21 March 2010

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