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Structural, Dielectric and Magnetic Properties of Bi2Fe4O9 Thin Film by RF Magnetron Sputtering

    https://doi.org/10.1142/S0219581X15500246Cited by:1 (Source: Crossref)

    This paper presents the growth of bismuth ferrite (Bi2Fe4O9) thin film by radio frequency magnetron reactive sputtering on p-Si (100) substrate and the characterization of the grown thin film. The deposited thin film is characterized by X-ray diffraction (XRD), field emission scanning electron micrograph (FESEM), energy dispersive X-ray analysis (EDAX), dielectric measurements and vibrating sample magnetometer (VSM) analysis. The XRD study reveals the orthorhombic structure of the crystallites and the particle size is calculated as 45 nm. The FESEM result confirms that the film has smooth surface and uniform distribution of nanoclusters. The percentage of chemical compositions of the film is confirmed by EDAX measurement. The dielectric behavior of the film is examined in terms of the dielectric constant and the dielectric loss as a function of frequency. The magnetic behavior of the film is measured using VSM with the applied magnetic field of about 1 Tesla and the result shows the ferromagnetic behavior of the sample at room temperature.