Ground State of Quasi-Two-Dimensional Electron–Hole Liquid on Silicon Surface
Abstract
The density functional theory is used for the determination of a ground state of a quasi-two-dimensional electron−hole liquid (EHL) in the presence of an external electric field. The Kohn−Sham equations for electrons and holes are numerically solved. The binding energies of electron−hole pair are calculated for various silicon surfaces. It is shown that EHL can exist on the (111) Si.