World Scientific
Skip main navigation

Cookies Notification

We use cookies on this site to enhance your user experience. By continuing to browse the site, you consent to the use of our cookies. Learn More
×

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

Existing users will be able to log into the site and access content. However, E-commerce and registration of new users may not be available for up to 12 hours.
For online purchase, please visit us again. Contact us at customercare@wspc.com for any enquiries.

THE ADVANTAGE OF LOW GROWTH TEMPERATURE AND V/III RATIO FOR InxGa1-xAs NANOWIRES GROWTH

    https://doi.org/10.1142/S1793292011002457Cited by:4 (Source: Crossref)

    Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of InxGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition.