MULTICORE MULTICHANNEL-DETECTION (MCMD) X-RAY ABSORPTION FINE STRUCTURES (XAFS) STUDIES OF THIN FILMS

The following sections are included:

• Introduction

• General Considerations

  • Absorption Coefficient and Photon Penetration Depth

  • Escape Depths of Various Yields

  • Instrumentation

• Applications

  • Ni/Si(100): Evolution of Nickel Silicide Thin Films

    • General Considerations

    • Ni and Si K edge XANES for the Blanket Films

    • Ni and Si L edge XANES for the Blanket Films and Submicron Lines

  • Al Diffusion Through a TiN_x Diffusion Barrier on Si(100)

    • General Considerations

    • Al K edge: TEY

    • Al K edge: FLY

    • Al L edge TEY and FLY

  • Porous Silicon

    • General Considerations

    • Synchrotron Radiation Induced Luminescence

    • XEOL and Optical XAFS at the Si K edge and the Origin of Luminescence from PS

    • XEOL and Optical XAFS at the Si L_3,2 edge

    • A MCMD Study of the Distribution of Luminescence Sites

• Summary

• Acknowledgments

• References

• Appendix: Recent Publications Using Multidetection X-ray Absorption Spectroscopy (MD-XAS) Techniques