Compound Semiconductor Growth by Metalorganic Molecular Beam Epitaxy (MOMBE)

The following sections are included:

• Introduction

• System Design

• Growth Chemistry

  • GaAs-based Materials

    • Substrate Preparation

    • Group III Sources

    • Group V Sources

  • InP-based Materials

    • Substrate Preparation

    • InP

    • Al_xIn_1−xAs

    • In_xGa_1−xAs

    • In_xGa_1−xAs_yP_1−y

  • GaSb-based Materials

  • Group III Nitrides

• Doping

  • Elemental Sources

    • N-type

    • P-type Doping

  • Gaseous Sources

    • N-type

    • P-type Doping

• The Role of Hydrogen

  • Sources of Hydrogen

    • Group III Sources

    • Group V Sources

    • Dopant Sources

    • Molecular Hydrogen

    • Atomic Hydrogen

  • Uses of Atomic Hydrogen

• Selective Epitaxial Growth

• Conclusions

• References