Terahertz Response of Tightly Concatenated Two Dimensional InGaAs Field-Effect Transistors Integrated on a Single Chip

Laboratory of Epitaxial Micro- and Nanostructures, Institute of Microelectronic Technology and High-Purity Materials, Chernogolovka, 142432, Russia

Laboratory of Epitaxial Micro- and Nanostructures, Institute of Microelectronic Technology and High-Purity Materials, Chernogolovka, 142432, Russia

Laboratory of Epitaxial Micro- and Nanostructures, Institute of Microelectronic Technology and High-Purity Materials, Chernogolovka, 142432, Russia

Department for Physics of Semiconductors, Institute for Physics of Microstructures, Nizhny Novgorod, 603950, Russia

Department for Physics of Semiconductors, Institute for Physics of Microstructures, Nizhny Novgorod, 603950, Russia

Physics of Semiconductor Heterostructure, Ioffe Physical Technical Institute, St. Petersburg, 194021, Russia

Physics of Semiconductor Heterostructure, Ioffe Physical Technical Institute, St. Petersburg, 194021, Russia

National Research University of Electronic Technology, Zelenograd, 124498, Russia

National Research University of Electronic Technology, Zelenograd, 124498, Russia

National Research University of Electronic Technology, Zelenograd, 124498, Russia

Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Saratov, 410019, Russia

Physics Department, Saratov State University, Saratov, 410012, Russia

Saratov Scientific Center of the Russian Academy of Sciences, Saratov, 410028, Russia

University of Aizu, Aizu-Wakamatsu, Aizu-Wakamatsu, 965-8580, Japan