Influence of the Annealing Temperature on Si/TiO2 Core/Shell NWs Arrays
This work is supported by the National Natural Science Foundation of China (61076039, 61204065, 61205193, 61307045, 61404009, 61474010), Research Fund for the Doctoral Program of Higher Education of China (20112216120005), the Developing Project of Science and Technology of Jilin Province (20140520107JH, 20140204025GX), National Key Laboratory of High Power Semiconductor Lasers Foundation (No. 9140C310101120C031115, 9140C310104110C3101, 9140C310102130C31107, 9140C31010240C310004).
Si/TiO2 core/shell nanowires arrays were fabricated using atomic layer deposition of TiO2 shell on Si nanowires (SiNWs) arrays prepared by metal assisted electroless etching method. After deposition, the Si/TiO2 nanowires arrays were annealed with different temperature. SEM image shows that annealing makes nanowires gathering on the sample surface. XRD curves indicate that annealing improved the crystalline quality and formed the TiO2 with anatase phase. Compare to the substrate diffraction peak intensity, annealed at 500°C has strongest diffraction peak intensity. It is demonstrated that TiO2 shell annealed at 500°C has the best crystalline quality.
