Next Generation DevicesNo Access

HIGH FREQUENCY GRAPHENE TRANSISTORS USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS

United States Army Research Laboratory, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, MD 20783, USA

Search for more papers by this author

TONY IVANOV

United States Army Research Laboratory, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, MD 20783, USA

Search for more papers by this author

JAMES WILSON

United States Army Research Laboratory, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, MD 20783, USA

Search for more papers by this author

ROBERT PROIE

United States Army Research Laboratory, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, MD 20783, USA

Search for more papers by this author

, and

MADAN DUBEY

United States Army Research Laboratory, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, MD 20783, USA

Search for more papers by this author

https://doi.org/10.1142/S0129156411006957Cited by:0 (Source: Crossref)

Abstract

Graphene transistors using large area chemical-vapor-deposited (CVD) monolayer graphene and advanced dielectric stacks are constructed and examined. Top-gated devices with a SiO₂/Al₂O₃ gate-dielectric have a Dirac Point (DP) located at less than 5 V and asymmetric electron/hole mobility. In contrast, devices based on an advanced AlN interfacial layer have a DP located near 0V and a near symmetric carrier mobility- characteristics that could be more suitable for applications that require ambipolar behavior and low-power operation. For the first time, a measured RF cut-off frequency range of 1GHz is measured for top-gated transistors using CVD graphene. The results are of importance for the realization of graphene based, wafer-scale, high frequency electronics.

Keywords:

Remember to check out the Most Cited Articles!
Check out these Notable Titles in Antennas

References

K. S. Novoselovet al., Science 306(5696), 666 (2004), DOI: 10.1126/science.1102896. Web of Science, Google Scholar
F. Schwierz, Nature Nanotechnology 5, 487 (2010), DOI: 10.1038/nnano.2010.89. Web of Science, Google Scholar
K. Geim and K. S. Novoselov, Nature Materials 6(3), 183 (2007), DOI: 10.1038/nmat1849. Web of Science, Google Scholar
S. V. Morozovet al., Physical Review Letters 100(016602), (2008). Google Scholar
F. Pregaldiny, J.-B. Kammerer and C. Lallement, Compact Modeling and Applications of CNTFETs for Analog and Digital Circuit Design, Proceedings of IEEE International Conference on Electronic, Circuits, and Systems (2006) pp. 130–133. Google Scholar
H. Wanget al., IEEE Electron. Device Letters 30(5), (2009). Google Scholar
N. Haradaet al., Applied Physics Letters 96(012102), (2010). Google Scholar
R. Sordan, F. Traversi and V. Russo, Applied Physics Letters 94, 073305 (2009), DOI: 10.1063/1.3079663. Web of Science, Google Scholar
I. Mericet al., IEDM Tech. Dig. 2008, 1 (2008). Google Scholar
Y. Linet al., Nano Letters 9(1), 422 (2009), DOI: 10.1021/nl803316h. Web of Science, Google Scholar
Y. Linet al., IEEE Electron. Device Letters 31(1), (2010). Google Scholar
J. S. Moonet al., IEEE Electron. Device Letters 30(6), (2009), DOI: 10.1109/LED.2009.2020699. Google Scholar
J. S. Moonet al., IEEE Electron. Device Letters 31(4), 260 (2010), DOI: 10.1109/LED.2010.2040132. Web of Science, Google Scholar
Y. Linet al., Science 327(5966), 662 (2010), DOI: 10.1126/science.1184289. Web of Science, Google Scholar
A. Pineret al., Science Express Reports 324(5932), (2009). Google Scholar
A. Reinaet al., Nano Letters 9(30), (2009). Google Scholar
S. Baeet al., Nature Nanotechnology 5, 574 (2010), DOI: 10.1038/nnano.2010.132. Web of Science, Google Scholar
Z. Luoet al., ACS Nano 3(7), 1781 (2009), DOI: 10.1021/nn900371t. Web of Science, Google Scholar
B. Leeet al., Applied Physics Letters 92, 203102 (2008), DOI: 10.1063/1.2928228. Web of Science, Google Scholar
G. Dambrineet al., IEEE Transactions on Microwave Theory 36(7), 1151 (1988), DOI: 10.1109/22.3650. Web of Science, Google Scholar
R. A. Minasian, Electron. Letters 13(8), 549 (1977), DOI: 10.1049/el:19770395. Web of Science, Google Scholar

Vol. 20, No. 03

Metrics

Downloaded 170 times

History

Keywords

PDF download

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

HIGH FREQUENCY GRAPHENE TRANSISTORS USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS

Abstract

Recommended