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THEORY OF MAGNETO RESISTANCE OF AMORPHOUS SEMICONDUCTORS

PRAKASH C. PADHI

Department of Physics, Berhampur University, Berhampur 760007, Orissa, India

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GOURI S. TRIPATHI

Department of Physics, Berhampur University, Berhampur 760007, Orissa, India

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, and

PRASANTA K. MISRA

Department of Physics, University of Houston, Houston, TX 77204, USA

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https://doi.org/10.1142/S0217979209053461Cited by:1 (Source: Crossref)

Abstract

We propose a simple theory to explain the anomalous magneto resistance of amorphous semiconductors in the hopping regime. We derive an expression for the magneto resistance (Δρ/ρ₀), in this regime by using a reinterpretation of the effective electronic mass, velocity, and lifetime based on the density matrix approach and a three-site jump probability in topologically disordered systems. Our theory accounts for the experimental observation of (Δρ/ρ₀) for low magnetic fields at room temperature and below and supports Mott's T^-1/4 for the variable range hopping of electrical conductivity.

Keywords:

PACS: 71.23.Cq, 72.15.Gd, 72.20.My

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