STRUCTURE AND PHOTOLUMINESCENCE PROPERTIES OF SILICON OXYCARBIDE THIN FILMS DEPOSITED BY THE RF REACTIVE SPUTTERING
Abstract
Silicon oxycarbide (SiCO) thin films were prepared by the RF reactive sputtering technique on n-type silicon substrates with the target of sintered silicon carbide (SiC), and high purity oxygen was used as the reactant gas. The as-deposited films were annealed at temperatures of 600°C, 800°C, and 1000°C under nitrogen ambient, respectively. The films were characterized by scanning electron microscopy, Fourier transform infrared spectroscopy, X-ray diffraction and photoluminescence (PL) spectrophotometer. The results show that annealing temperature plays an important role in the structure and photoluminescence of the films. The temperature 600°C is the most favorable annealing temperature for SiO2 crystallization and the formation of 6H-SiC crystal phase in the SiCO films. The intense PL peaks located at 375 nm and 470 nm are observed at room temperature. The origin of the PL was discussed.
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