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Distributed Amplifier Based on Monolayer Graphene Field Effect Transistor

Ali Safari

Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran

E-mail Address: a.safari91@iau-arak.ac.ir

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Massoud Dousti

Department of Electrical and Computer Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran

E-mail Address: m_dousti@srbiau.ac.ir

Corresponding author.

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, and

Mohammad Bagher Tavakoli

Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran

E-mail Address: mb-tavakoli@iau-arak.ac.ir

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https://doi.org/10.1142/S0218126619502311Cited by:3 (Source: Crossref)

Abstract

Due to the ultra-high carrier mobility and ultralow resistivity of Graphene channel, a Graphene field effect transistor (GFET) is an interesting candidate for future RF and microwave electronics. In this paper, the introduction and review of existing compact circuit-level model of GFETs are presented. A compact GFET model based on drift-diffusion transport theory is then implemented in Verilog-A for RF/microwave circuit analysis. Finally, the GFET model is used to design a GFET-based distributed amplifier (DA) using advanced design system (ADS) tools. The simulation results demonstrate a gain of 8dB, an input/output return loss less than $-$ 10dB, $-$ 3dB bandwidth from DC up to 5GHz and a dissipation of about 60.45mW for a 1.5V power supply. The main performance characteristics of the distributed amplifier are compared with 0.18 $μ$ m CMOS technology.

This paper was recommended by Regional Editor Piero Malcovati.

Keywords:

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