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ArticlesNo Access

THE RAMAN SPECTRA CHARACTERISTICS OF a-CN_x FILMS GROWN ON QUARTZ SUBSTRATES BY NEWLY DEVELOPED SURFACE WAVE MICROWAVE PECVD

Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam 40450, Selangor, Malaysia

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Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam 40450, Selangor, Malaysia

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Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan

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Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan

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Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan

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https://doi.org/10.1142/S0218625X06008529Cited by:0 (Source: Crossref)

Abstract

Amorphous carbon nitride (a-CN_x) films were deposited on quartz substrates by newly developed surface wave microwave plasma chemical vapor deposition (SWMP-CVD) of alcohol camphoric carbon plasma source at room temperature. Then the a-CN_x films were heat-treated at various annealing temperatures (AT) in the 100–500°C range. The effects of heat treatment on the structural modifications were studied by Visible-Raman spectroscopy through the evolution of D and G peaks. The spectral evolution observed on heat-treated a-CN_x shows progressive formation of crystallites. Raman spectra have revealed the amorphous structure of as-grown a-CN_x films and the growth of nanocrystallinity upon increase of AT. These structural changes were further correlated with optical band gap and fraction of sp³ bonded carbons present, derived respectively from the UV-visible and photoelectron spectroscopy. The wide range of optical absorption coefficient characteristics is observed depending on the AT. The optical band gap of as-grown a-CN_x films is found to be approximately 2.8 eV; it gradually decreases to 2.5 eV for the films heat-treated at 300°C and then it decreases rapidly to 0.9 eV at 500°C. The results obtained are discussed and compared with the literatures.

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Vol. 13, No. 05

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Received 3 February 2006

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