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LANGEVIN APPROACH TO UNDERSTAND THE NOISE OF MICROWAVE TRANSISTORS

INFM Unità di Palermo and Dipartimento di Fisica e Tecnologie Relative, Università di Palermo, Viale delle Scienze, 90128 Palermo, Italy

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BERNARDO SPAGNOLO

INFM Unità di Palermo and Dipartimento di Fisica e Tecnologie Relative, Università di Palermo, Viale delle Scienze, 90128 Palermo, Italy

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GAETANO FERRANTE

INFM Unità di Palermo and Dipartimento di Fisica e Tecnologie Relative, Università di Palermo, Viale delle Scienze, 90128 Palermo, Italy

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, and

ALINA CADDEMI

INFM Unità di Messina and Dipartimento di Fisica della Materia e Tecnologie Fisiche, Avanzate, Università di Messina - Contrada Sperone, 31 - S. Agata, 98166 Messina, Italy

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https://doi.org/10.1142/S0219477504002130Cited by:1 (Source: Crossref)

Abstract

A Langevin approach to understand the noise of microwave devices is presented. The device is represented by its equivalent circuit with the internal noise sources included as stochastic processes. From the circuit network analysis, a stochastic integral equation for the output voltage is derived and from its power spectrum the noise figure as a function of the operating frequency is obtained. The theoretical results have been compared with experimental data obtained by the characterization of an HEMT transistor series (NE20283A, by NEC) from 6 to 18 GHz at a low noise bias point. The reported procedure exhibits good accuracy, within the typical uncertainty range of any experimental determination. The approach allows to extract all the information required for understanding the noise performance of the device without any restriction on the statistics of the noise sources. The results show the relevant noise phenomena from a new angle.

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