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  • articleNo Access

    THE ELECTRONIC BAND STRUCTURE OF AlN, AlSb, AlAs AND THEIR TERNARY ALLOYS WITH In

    The electronic band structure of AlN, AlSb, AlAs and their ternary alloys with In has been investigated by ETB. The ETB method has been formulated for sp3d2 basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on AlN, AlSb and AlAs. It has been found that the present ETB energy parameters can produce the band structure of the compounds and their ternary alloys with In successfully.

  • articleNo Access

    VALLEY SPLITTING AND g-FACTOR IN AlAs QUANTUM WELLS

    Here we present the results of magneto resistance measurements in tilted magnetic field and compare them with calculations. The comparison between calculated and measured spectra for the case of perpendicular fields enable us to estimate the dependence of the valley splitting as a function of the magnetic field and the total Landé g-factor (which is assumed to be independent of the magnetic field). Since both the exchange contribution to the Zeeman splitting as well as the valley splitting are properties associated with the 2D quantum confinement, they depend only on the perpendicular component of the magnetic field, while the bare Zeeman splitting depends on the total magnetic field. This information aided by the comparison between experimental and calculated gray scale maps permits to obtain separately the values of the exchange and the bare contribution to the g-factor.