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Here we report our research on quantum-dot structures with collective barriers surrounding groups of quantum dots (planes, clusters etc) and preventing photoelectron capture. Employing Monte-Carlo simulations, we investigate photoelectron kinetics and calculate the photoelectron lifetime as a function of geometrical parameters of the structures, dot occupation, and electric field. Results of our simulations demonstrate that the capture processes are substantially suppressed by the potential barriers and enhanced in strong electric fields. Detailed analysis shows that the effects of the electric field can be explained by electron heating, i.e. field effects become significant, when the shift of the electron temperature due to electron heating reaches the barrier height. Optimized photoelectron kinetics in quantum-dot structures with collective barriers allows for significant improvements in the photoconductive gain, detectivity, and responsivity of photodetectors based on these structures.