A functional polyimide (CF3 PI) was used as the active layer in our present work for electrical resistive memory device applications. Current–voltage (II–VV) characteristics analysis on the polyimide memory devices indicates that the polyimide possesses a nonvolatile rewritable flash characteristic with an ON/OFF current ratio of about 104 at the threshold voltage of around −1.2−1.2V and 3.8V. In addition, the device using the CF3 PI as the active layer reveals excellent long-term operation stability with the endurance of reading cycles up to 108 under a voltage pulse and retention times for at least 106s under constant voltage stress (1V). The conduction mechanisms are elucidated on the basis of the thermionic emission theory and filament conduction.
