Narrow Results

Crystalline lattice point defects in integrated circuit can lay hidden below the silicon surface exist in the atomic lattice point structure or as interstitials. Initially they may not necessary represent an electrical failure but can act as seeds for electrical degradation in a time period. This paper study one category of Silicon defect “Dislocation loops” that initially were dormant then propagated under the silicon surface in the crystal lattice structure causing catastrophic EOS damage. This is particularly true if the crystalline defect exists near or at the boundary of PN junctions. This paper present evidence of dormant crystalline lattice defects in the form of crystalline dislocation loops degrading to EOS. Over a period of time under normal operation life of the part these dislocation loops can trigger EOS/ESD events.

Cu₂Te single crystal was grown by the Bridgman method. X-ray diffraction (XRD) study of Cu₂Te single crystals in the temperature range of 293–893 K was performed and possible phase transitions in the mentioned range of temperature have been investigated. (Cu₂Te)${}_{2-x}$(ZnTe)${}_x$ single crystals also were grown with $x=0.00$, 0.05, 0.10 concentrations and structural properties of the obtained single crystals were investigated by the XRD method in the temperature range 293–893 K. Lattice parameters and possible phase transitions in the mention temperature range were determined for (Cu₂Te)${}_{2-x}$(ZnTe)${}_x$ single crystals for $x=0.00$, 0.05, 0.10 concentrations.

In connection with several attempts to extend Onsager’s (1944) crystal statistics to three dimensions keeping the spirit of the original Ising’s (1925) model, we suggest to involve binary and ternary extension of triangles in connection with fractals and chaos, following the ideas of Kikuchi (1951). We apply ternary Clifford algebras in addition to the usual (binary) Clifford algebras and identify two ternaries with three ternaries with the help of noncommutative Galois extension. In some sense, the paper continues the ideas of Ławrynowicz, Marchiafava and Nowak-Kȩpczyk (2006), and Kerner and Suzuki (2012) published in this journal.

Discrete breather (DB) is spatially localized vibrational mode in defect-free nonlinear lattice. Frequency of DB must lie outside the spectrum of small-amplitude traveling waves. It neither does resonate with traveling waves and nor does it lose energy to their excitation. Theoretically DB can maintain its vibrational energy forever in the absence of thermal vibrations and other perturbations. Crystals are nonlinear discrete systems and they also support existence of DB. Experimental studies of DB run into considerable technical difficulties, and the main tool of their study is by far the atomistic computer simulations. Having gained confidence in the existence of DB in crystals, we still poorly understand their role in solid state physics. This review covers issues specific to the physics of real crystals, which were not considered in the classical works on DB. Focus is placed on the energy transport through crystal lattice assisted by moving DB and by energy exchange between DB.