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Domain engineering can simplify the development of software systems in specific domains. During domain analysis, the first step of domain engineering, the domain is modeled at an abstract level, providing guidelines for modeling applications within that domain. Drawbacks of existing domain analysis approaches include poor guidelines for domain-specific application modeling, insufficient validations capability, and limited usability. In this paper we apply the Application-based Domain Modeling (ADOM) to the Object-Process Methodology (OPM). This application requires the extension of OPM with a classification mechanism. Showing that the ADOM-OPM approach overcomes limitations of existing approaches, we further verify experimentally that the level of correctness of an ADOM extended OPM model is higher than that achieved without the extension. Finally, we ensure that the proposed extension does not degrade the generic vanilla form of OPM.

The formation of the ferroelectric domain structure as a result of irradiation by focused ion beam of [100]-cut 0.61Pb(Mg${}_{1∕3}$Nb${}_{2∕3})$O₃–0.39PbTiO₃ (PMN–PT) single crystals covered by surface artificial dielectric layer and with free surface was investigated. The dot irradiation resulted in formation of the wedge-like domains grown along [00$\bar{1}$] direction. For irradiation of the free surface, the domains are mainly located under the surface, while at the irradiated surface with an artificial dielectric layer the domains are located at the surface. It was shown that the subsurface wedge-shaped part of the domain is unstable and completely disappears after a month due to spontaneous backswitching under the action of the residual depolarization field. The revealed nonlinear dose dependence of the domain sizes was attributed to the distribution of the electric field using the point charge model. The domain interaction for the distance between irradiated dots below 30$\mu$m has been revealed in all samples. It was shown that the decrease of the distance between irradiated dots in the created domain row leads to an increase in the length of the central domains, which is explained by the contribution of all injected charges to the switching field.

In this paper, we studied the formation of self-organized domain arrays created by moving biased tip of scanning probe microscope (SPM) in deuterated TGS crystals. The shape of created domains depends significantly on scanning direction and applied voltage. For scanning along c axis, the domain shape drastically changed from arrays to stripe domains at 150V. Scanning perpendicular to $c$ axis led to formation of the array of the dashed domains. Increasing of the dashed domain length leads to change of domain shape from arrays of dashed domains to solid stripe domain. The obtained effect has been considered in terms of the kinetic approach as a result of formation of comb-like domain with charged domain walls in the bulk due to repetitive appearance of the domain spikes. The spontaneous backswitching under the action of the depolarization field leads to the fast growth of the tooth to the surface and results in the transformation of the domain shape. The computer simulation of the nonuniform motion of charged domain wall under the action of depolarization field has been done. The obtained results demonstrate the essential role of screening processes and pave the way for further improvement of domain engineering methods.