Keyword: Integrated Diode : Search

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Keyword: Integrated Diode (2)	28 Mar 2025	Run
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articleNo Access
CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN 1.2kV 4H-SiC VERTICAL POWER MOSFET
- HARSH NAIK,
- YI WANG, and
- T. PAUL CHOW
International Journal of High Speed Electronics and Systems01 Mar 2009
Preview Abstract
We have characterized and modeled the integrated diode of a 1.2kV 4H-SiC power MOSFET. We have measured its static and dynamic characteristics up to 200°C and extracted relevant SPICE model parameters. From the extracted turn-on voltage and ideality factors, we conclude that the integral diode is not a pin junction diode, but a unipolar diode.
chapterNo Access
CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN 1.2kV 4H-SiC VERTICAL POWER MOSFET
- HARSH NAIK,
- YI WANG, and
- T. PAUL CHOW
Advanced High Speed Devices01 Dec 2009
Preview Abstract
We have characterized and modeled the integrated diode of a 1.2kV 4H-SiC power MOSFET. We have measured its static and dynamic characteristics up to 200°C and extracted relevant SPICE model parameters. From the extracted turn-on voltage and ideality factors, we conclude that the integral diode is not a pin junction diode, but a unipolar diode.

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